• 关键词：半导体材料  活性污泥  脱氢酶  抑制动力学  废水处理

• 基金项目：国家自然科学基金资助课题

• 缪甦
• 浙江农业大学环境保护系,杭州

• 叶兆杰
• 浙江农业大学环境保护系,杭州

• 摘要：以活性污泥脱氢酶的活性作为毒性指标,研究了半导体材料GaAs、Ga³⁺、Ge⁴⁺对活性污泥活性的抑制影响,并用Hg²⁺作为参比材料;同时对抑制动力学也作了初步研究。实验表明,GaAs、Ga³⁺、Ge⁴⁺及Hg²⁺的10％抑制浓度分别为45.00,371.63,0.13ppm/gMLSS,GaAs、Ga³⁺、Ge⁴⁺和Hg²

• Abstract：The effects of GaAs, Ga³⁺ and Ge⁴⁺ in wastewater from semiconductor material production on the activities of dehydrogenases of activated sludge (MLSS of 2000 mg/L) were studied. The concentrations for 10% inhibition were 0.13, 45, 371 and 63 ppm/g MLSS for Hg²⁺, GaAs, Ga³⁺ and Ge⁴⁺, respectively. The 50% inhibition produced by Hg²⁺ at 2.7 ppm/gMLSS,25% by GaAs at 170ppm/gMLSS and Ge⁴⁺ at 228ppm/gMLSS. No competitive effects was found for the four inhibitors. The inhibition constants(Ki) of Hg²⁺, GaAs, Ga³⁺ and Ge⁴⁺ were 5.49×10^-3 mmo1(1.25ppm/gMLSS), 1.30 mmol (180ppm/gMLSS), 7.05 mmol (700ppm/gMLSS) and 6.12mmol (250 ppm/gMLSS), respectively.

• Key words：Semiconductor material  wastewater  dehydrogenase  activated sludge  inhibition

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