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研究报告

摘要：成功将氧化铟掺杂到氧化镓上制备了In₂O₃/Ga₂O₃催化剂，并利用X射线衍射（XRD）、透射电子显微镜（TEM）、X射线光电子能谱（XPS）、紫外漫反射光谱（UV-Vis DRS）、光致发光光谱（PL）和电感耦合等离子体发射光谱（ICP-AES）等表征手段对In₂O₃/Ga₂O₃进行了分析.同时，进一步考察了In₂O₃/Ga₂O₃的光催化固氮性能.结果表明，In₂O₃的引入提高了Ga₂O₃的光吸收性能和氧空位的比例，并且有利于其表面光生电子和空穴的分离.当In₂O₃/Ga₂O₃材料用于光催化固氮时，其最佳In₂O₃掺杂量为2.29%，最佳材料焙烧温度为500℃.最后，研究了空穴捕获剂种类的影响，发现在叔丁醇的体系中，In₂O₃/Ga₂O₃的光催化固氮效率最高.此外，氮源对固氮效果也存在较大影响.以空气作为氮源的光催化固氮过程因存在间接固氮过程，相对于以高纯氮气作为氮源的光催化固氮效率更高.

Abstract：In₂O₃/Ga₂O₃ catalysts were successfully synthesized by doping indium oxide into gallium oxide and characterized by X-ray powder diffraction(XRD), transmission electron microscopy(TEM),X-ray photoelectron spectroscopy(XPS), UV-vis spectra(UV-vis DRS), photoluminescence spectroscopy(PL) and inductive coupled plasmaemission spectrometer(ICP-AES).The efficiency of nitrogen photofixation over In₂O₃/Ga₂O₃ catalysts was investigated.The results showed that the introduction of In₂O₃ could improve the light-absorbing ability and oxygen vacancies of Ga₂O₃, and enhance the separation efficiency of photo-induced electron-holes.It is found that the optima doping content and calcination temperature of In₂O₃/Ga₂O₃ in nitrogen photofixation was 2.29% and 500℃, respectively.After evaluating the effect of hole-trapping scavengers, the nitrogen photofixation efficiency of In₂O₃/Ga₂O₃ was found to be the highest with addition of t-BuOH as scavenger.In addition, nitrogen source also had an effect on the nitrogen photofixation performance of the catalyst.The nitrogen photofixation efficiency under the air was relatively higher than that under the high-purity nitrogen gas because of the indirect nitrogen photofixation process.