研究报告

  • 王祥臣,周瑞峰,杨姝宜,鄂涛.蒙脱土原位生长MoS2复合材料光催化降解罗丹明B的机理研究[J].环境科学学报,2022,42(7):246-256

  • 蒙脱土原位生长MoS2复合材料光催化降解罗丹明B的机理研究
  • Photocatalytic degradation of Rhodamine B by in-situ growing MoS2 composite with montmorillonite
  • 基金项目:国家自然科学基金(No.21878024);辽宁省(锦州)毛皮绿色制造产业技术创新战略联盟项目(No.201854)
  • 作者
  • 单位
  • 王祥臣
  • 渤海大学化学与材料工程学院,锦州 121013
  • 周瑞峰
  • 渤海大学化学与材料工程学院,锦州 121013
  • 杨姝宜
  • 渤海大学化学与材料工程学院,锦州 121013
  • 鄂涛
  • 渤海大学化学与材料工程学院,锦州 121013
  • 摘要:通过在Na+-MMT表面生长MoS2来提高窄带隙半导体光生电子分离速率及稳定性.利用阳离子填充法及水热法成功制备了复合光催化剂Na+-MMT/MoS2,并通过FT-IR、SEM、TEM、Raman、XRD、TG、XPS、UV-DRS和ESR等表征进一步证明了材料的成功负载及光、电化学性能. 同时,以有机染料罗丹明B为待降解染料来评价光催化剂的催化性能,发现其在80 min可有效降解罗丹明B,降解率达96%.经过5次循环使用后,Na+-MMT/MoS2复合光催化剂仍具有较好的光催化性能.因此,利用MMT的表面电负性及稳定的片层结构负载MoS2,可形成光生电子迁移通道进一步提高电荷迁移速率及光催化剂的稳定性.本研究可为黏土材料调控窄带隙半导体制备环境友好型光催化剂提供新思路.
  • Abstract:In order to improve the separation rate and stability of photogenerated electron in narrow bandgap semiconductors, MoS2 was grown on the surface of Na+-MMT in this study. The composite photocatalyst Na+-MMT/ MoS2 was successfully prepared via cationic filling method and hydrothermal method. It was further demonstrated that the loading of MoS2 was successful and the photochemical properties of the materials were also revealed via the characterizations of FT-IR, SEM, TEM, RAMAN, XRD, TG, XPS, UV-DRS and ESR. Moreover, the catalytic performance of the photocatalyst was evaluated using the organic dye Rh-B as the target pollutant, which could effectively degrade rhodamine B (degradation rate was 96%). degraded within 80 min. In addition, it still showed good photocatalytic performance after recycling for 5 times. It was confirmed that the charge migration rate and the stability of the photocatalyst were enchanced due to the surface electronegativity of MMT and creating photogenerated electron migration channels, contributing by the stable lamellar structure that was loaded with MoS2. Therefore, this study was performed to provide new ideas for the preparation of environmentally friendly photocatalysts by modulating narrow band gap semiconductors with clay materials.

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